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PD - 95249
SMPS MOSFET
IRF7456PBF
HEXFET(R) Power MOSFET
Applications High Frequency DC-DC Converters with Synchronous Rectification l Lead-Free
l
VDSS
20V
RDS(on) max
0.0065
ID
16A
Benefits Ultra-Low RDS(on) at 4.5V VGS l Low Charge and Low Gate Impedance to Reduce Switching Losses l Fully Characterized Avalanche Voltage and Current
l
S S S G
1 2 3 4
8 7
A A D D D D
6 5
Top View
SO-8
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ , TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
20 12 16 13 130 2.5 1.6 0.02 -55 to + 150
Units
V V A W W W/C C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Max.
50
Units
C/W
Typical SMPS Topologies
l
Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers
Notes through are on page 8
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1
10/12/04
IRF7456PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 --- --- Static Drain-to-Source On-Resistance --- --- Gate Threshold Voltage 0.6 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 0.024 --- V/C Reference to 25C, ID = 1mA 0.00470.0065 VGS = 10V, ID = 16A 0.00570.0075 VGS = 4.5V, ID = 13A 0.011 0.020 VGS = 2.8V, ID = 3.5A --- 2.0 V VDS = VGS, ID = 250A --- 20 VDS = 16V, VGS = 0V A --- 100 VDS = 16V, VGS = 0V, TJ = 125C --- 200 VGS = 12V nA --- -200 VGS = -12V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 44 --- --- --- --- --- --- --- --- --- --- Typ. --- 41 9.7 18 20 25 50 52 3640 1570 330 Max. Units Conditions --- S VDS = 10V, ID = 16A 62 ID = 16A 15 nC VDS = 16V 27 VGS = 5.0V, --- VDD = 10V --- ID = 1.0A ns --- RG = 6.0 --- VGS = 4.5V --- VGS = 0V --- VDS = 15V --- pF = 1.0MHz
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
250 16 0.25
Units
mJ A mJ
Diode Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 48 74 2.5 A 130 1.2 72 110 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 2.5A, VGS = 0V TJ = 25C, IF = 2.5A di/dt = 100A/s
D
S
2
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IRF7456PBF
1000
VGS 15V 10V 4.5V 3.0V 2.7V 2.5V 2.25V BOTTOM 2.0V TOP
1000
I D , Drain-to-Source Current (A)
100
10
I D , Drain-to-Source Current (A)
100
VGS 15V 10V 4.5V 3.0V 2.7V 2.5V 2.25V BOTTOM 2.0V TOP
10
1
2.0V
1 0.1
0.1 0.1
2.0V
1
20s PULSE WIDTH TJ = 25 C
10 100
20s PULSE WIDTH TJ = 150 C
10 100
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
100.0
T J = 150C
ID, Drain-to-Source Current ()
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 16A
1.5
10.0
T J = 25C
1.0
1.0
0.5
0.1 2.0 2.2 2.4
VDS = 15V 20s PULSE WIDTH
2.6 2.8 3.0 3.2
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( C)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7456PBF
6000
5000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
12
ID = 16A
VDS = 16V
10
C, Capacitance (pF)
4000
Ciss
8
3000
6
2000
Coss
4
1000
2
Crss
0 1 10 100 0 0 20 40
FOR TEST CIRCUIT SEE FIGURE 13
60 80
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
I D , Drain Current (A)
TJ = 150 C
10
10us
100 100us
TJ = 25 C
1
1ms 10 10ms
0.1 0.2
V GS = 0 V
0.6 1.0 1.4 1.8 2.2
1 0.1
TA = 25 C TJ = 150 C Single Pulse
1 10 100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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Fig 6. On-Resistance Vs. Drain Current
IRF7456PBF
20
VDS
15
RD
VGS RG 10V
Pulse Width 1 s Duty Factor 0.1 %
ID , Drain Current (A)
D.U.T.
+
-V DD
10
5
Fig 10a. Switching Time Test Circuit
VDS 90%
0
25
50
75
100
125
150
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
100 D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 PDM t1 t2
Thermal Response (Z thJA )
0.01 0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF7456PBF
RDS (on) , Drain-to-Source On Resistance ()
0.0062 VGS = 4.5V
RDS(on) , Drain-to -Source On Resistance ()
0.012
0.0058
0.010
0.0054
0.008
0.0050
VGS = 10V
0.006
ID = 16A
0.0046 0 20 40 60 80 100 ID , Drain Current (A)
0.004 0 4 8 12 16
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance Vs. Gate Voltage
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
600
VG
EAS , Single Pulse Avalanche Energy (mJ)
VGS
3mA
TOP
500
Charge
IG ID
BOTTOM
ID 7.2A 10A 16A
Current Sampling Resistors
400
Fig 13a&b. Basic Gate Charge Test Circuit and Waveform
300
200
15V
V(BR)DSS tp
VDS L
100
DRIVER
RG
20V
D.U.T
IAS
+ V - DD
0
A
25
I AS
tp
0.01
Starting TJ , Junction Temperature ( C)
50
75
100
125
150
Fig 14a&b. Unclamped Inductive Test circuit and Waveforms
Fig 14c. Maximum Avalanche Energy Vs. Drain Current
6
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IRF7456PBF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D A 5 B
DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00
A1 .0040
6 E
8
7
6
5 H 0.25 [.010] A
c D E e e1 H
1
2
3
4
.050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8
1.27 BASIC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8
6X
e
K L y
e1
A
K x 45 C 0.10 [.004] y 8X c
8X b 0.25 [.010]
A1 CAB
8X L 7
NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A SUBS T RAT E. 3X 1.27 [.050] 6.46 [.255]
FOOT PRINT 8X 0.72 [.028]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY S IT E CODE LOT CODE PART NUMBER
INT ERNAT IONAL RECT IFIER LOGO
XXXX F 7101
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7
IRF7456PBF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25C, L = 2.0mH
RG = 25, IAS = 16A.
Pulse width 300s; duty cycle 2%. When mounted on 1 inch square copper board, t<10 sec
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04
8
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